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  dimensions in millimeters maximum ratings and electrical characteristics for capacitive load, derate current by 20%. single phase, half wave, 60hz, resistive or inductive load. rating at 25 o c ambient temperature unless otherwise specified. notes : -55 to + 165 kbp kbp200 symbol v rrm v rms v dc i (av) i fsm v f i r i 2 t c j t j , t stg kbp201 kbp202 kbp204 KBP206 kbp208 kbp210 50 100 800 600 400 35 70 560 420 280 50 100 800 600 400 2.0 10.0 60 1.0 25 1.1 unit v v v v a a ua ma o c pf 200 140 200 1000 700 1000 maximum recurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified peak forward surge current, 8.3ms single maximum instantaneous forward voltage maximum dc reverse current @t j =25 o c typical junction capacitance (note 1) operating junctionand storage current t a =50 o c half sine-wave superimposed on rated load (jedec method) @ 2.0 a at rated dc blocking voltage @t j =125 o c typical thermal resistance per leg rating for fusing (t < 8.3ms) r ja 15 32 a 2 s o c/w temperature range (1) measured at 1.0 mhz and applied reverse voltage of 4.0 volts dc. (2) thermal resistance form junction to ambient mounted on p.c.b with 0.5 x 0.5"(13x13mm) copper pads. ? weight: 0.06 ounce, 1.7 grams ? terminals: solderable per mil-std-202, f e a t u r e s ? case: molded plastic body over passivated ? polarity: as marked on body ? mounting position: any junctions mechanical data ? plastic package has underwriters laboratory flammability classification ? ideal for printed circuit boards ? high surge current capability 94v-0 method 208 kbp200~210 + 14.2 0.5 + 11.5 0.5 14.0 min. + 0.8 0.1 0 + 3.75 0.5 + 10.6 0.5 + 4.5 0.2 + 1.2 0.2 description mechanical dimensions data sheet 2 .0 amp single phase silicon bridge typical thermal resistance (note 2) r jl 11
fig. 1 derating curve for output rectified current fig. 2 maximum non-repetitive peak forward surge current fig. 3 typical instantaneous forward characteristics fig. 4 typical reverse characteristics fig. 5 typical junction capacitance a v e r a g e f o r w a r d o u t p u t c u r r e n t , a m p e r e s p e a k f o r w a r d s u r g e c u r r e n t , a m p e r e s i n s t a n t a n e o u s f o r w a r d c u r r e n t , a m p e r e s i n s t a n t a n e o u s r e v e r s e c u r r e n t , a m p e r e s c a p a c i t a n c e , p f number of cycles at 60hz instantaneous forward voltage, volts percent of rated peak reverse voltage, % reverse voltage, volts 20 40 50 60 1 10 100 .01 0.1 1.0 10 0.4 0.6 0.8 1.0 1.2 1.4 100 1 10 100 30 10 0 10 8.3ms single half-sine-wave [jedec method] tj=25 c pulse width=300us 2% duty cycle tj=25 c f=1.0mhz 0 1.0 10 0 50 15 0 1.5 0.5 2. 0 60hz resistive of inductive load 60hz resistive of inductive load .01 0.1 1.0 10 0 20 40 60 80 100 120 140 ta=25 c ta=100 c ta=125 c case t emperature, c o data sheet 2 .0 amp single phase silicon bridge


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